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A plane sapphire wafers have a uniform dielectric constant and highly insulating characteristic, so they are generally used for hybrid microelectronic applications. This orientation can also be used for the growth of high superconductors.
For example, TlBaCaCuO (TbBaCaCuO), Tl-2212, the hetero-epitaxial superconducting thin film is grown on an optical sapphire cerium oxide (CeO2) composite substrate. The availability of Angstrom level surface finishes allows for fine line interconnects of hybrid modules.
Specifications of A-Plane (11-20) Sapphire Wafers
Item
2-inch A-plane(11-20) 430μm Sapphire Wafers
Crystal Materials
99,999%, High Purity, Monocrystalline Al2O3
Grade
Prime, Epi-Ready
Surface Orientation
A-plane(11-20)
Diameter
50.8 mm +/- 0.1 mm
Thickness
430 μm +/- 25 μm
Primary Flat Orientation
C-plane(0001) +/- 0.2°
Primary Flat Length
16.0 mm +/- 1.0 mm
Single Side Polished
Front Surface
Epi-polished, Ra < 0.5 nm (by AFM)
(SSP)
Back Surface
Fine ground, Ra = 0.8 μm to 1.2 μm
Double Side Polished
Front Surface
Epi-polished, Ra < 0.5 nm (by AFM)
(DSP)
Back Surface
Epi-polished, Ra < 0.5 nm (by AFM)
TTV
< 10 μm
BOW
< 10 μm
WARP
< 10 μm
Cleaning / Packaging
Class 100 cleanroom cleaning and vacuum packaging,
25 pieces in one cassette packaging or single piece packaging.
Note: Custom sapphire wafers and substrates with any orientation and any thickness can be provided.
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