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Selling YZPST thyristor jiangsu
| Model No. : | YZPST-KN1000A16-BSTR60110 |
|---|---|
| Brand Name : | YZPST |
| Type : | Intrinsic Semiconductor |
Yangzhou, Jiangsu, China
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Product description
Asymmetric thyristors
YZPST-KN1000A16-BSTR60110
ELECTRICAL CHARACTERISTICS AND RATINGS
Asymmetric thyristors Type:YZPST A60110
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 F capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Blocking - Off State
|
VRRM (1) |
VDRM (1) |
|
20 |
1600 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
|
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM
|
100 mA
|
|
Critical rate of voltage rise |
dV/dt (4) |
1000 V/msec |
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Average value of on-state current |
IT(AV)M |
|
1000 |
|
A |
Sinewave,180o conduction,Tsink=55oC |
|
RMS value of on-state current |
ITRMS |
|
2000 |
|
A |
Nominal value |
|
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
20
|
|
KA |
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I square t |
I2t |
|
2x106 |
|
A2s |
10.0 msec |
|
Latching current |
IL |
|
- |
|
mA |
VD = 24 V; RL= 12 ohms |
|
Holding current |
IH |
|
1000 |
|
mA |
VD = 24 V; I =2.5 A |
|
Peak on-state voltage |
VTM |
|
2.42 |
|
V |
ITM =2000 A; Tj = 125 oC |
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
- |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
|
Critical rate of rise of on-state current (6) |
di/dt |
|
800 |
|
A/ms |
Switching from VDRM £ 1000 V |
Gating
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
30 |
|
W |
tp = 40 us |
|
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
|
Peak gate current |
IGM |
|
- |
|
A |
|
|
Gate current required to trigger all units |
IGT |
|
- 300 - |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
|
Gate voltage required to trigger all units
|
VGT |
|
- 3.0 - |
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
|
Peak negative voltage |
VGRM |
|
5 |
|
V |
|
Dynamic
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Delay time |
td |
|
1.6 |
0.8 |
ms |
ITM =500 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
|
Turn-off time (with VR = -50 V) |
tq |
|
- |
20 |
ms |
ITM =1000 A; di/dt =25 A/ms; VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
|
Reverse recovery charge |
Qrr |
|
- |
- |
mC |
ITM =1000 A; di/dt =25 A/ms; VR ³ -50 V |
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
|
Thermal resistance - junction to case |
RQ (j-c) |
|
- - |
|
K/W |
Double sided cooled Single sided cooled |
|
Thermal resistance - case to heatsink |
RQ (c-s) |
|
- - |
|
K/W |
Double sided cooled Single sided cooled |
|
Thermal resistance - junction to heatsink |
RQ (j-s) |
|
0.02 0.04 |
|
K/W |
Double sided cooled Single sided cooled |
|
Mounting force |
P |
19 |
26 |
|
kN |
|
|
Weight |
W |
|
|
- |
g |
about |
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data
Yangzhou, Jiangsu, China
- Distributor/Wholesaler
- Manufacturer
- Service
- Trade Company
- OEM service
- Gold Supplier
- Platform Certification
- Online Expo
- Video
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