IC grade 3 inch polished mono silicon wafer

Specifications IC grade 3 inch polished mono silicon wafer

1.IC Grade

2.Size: 3"

3:Conductive Type:N /P

4.Dopant:Phos. Sb. As /Boron

IC grade 3 inch  polished mono silicon wafer

IC Grade Mono Silicon Wafer (single side polished )
Size	3"
Growth method	CZ
Grade	test grade/dummy grade
Diameter	200±0.3mm
Orientation	<111>/<100>
Type	N-type/P-type
Dopant	P-type:Boron
	N-type:Phos./As./Sb.
Purity	11N(99.999999999%)
Oxygen Content	≤18 New PPMA
Carborn Content	≤1 New PPMA
Resistivity	≥0.001Ω·cm
Thickness	≥200um, or according to your requirement
Others	TTV≤10um, Bow≤35um,Warp≤35um
Particles	≥0.3um@≤10PPW
Surface	Frond side polished,back side etched.
MOQ	100pcs
Package	Packed in cassette,and sealed in vacuum bag,25pcs/cassette.
Price	According to your specification,especially resistivity and thickness