3-6 Inch IC Grade Mono Si Ingot

Specifications IC Grade Si Ingot

1.N/P type

2.Dopant phos, As, Sb, Boron

3.Growth Method:CZ, FZ

3-6 Inch IC Grade Mono Si Ingot :specs

IC Grade Mono Silicon Ingot
Size	3"/4"/5"/6"/8''
Growth method	CZ
Diameter	50.8±0.2mm / 76.2±0.3mm /100±0.4mm / 125±0.5mm / 150±0.5mm
Orientation	<111>/<100>
Type	N-type/P-type
Dopant	P-type:Boron
	N-type:Phos./As./Sb.
Purity	11N(99.999999999%)
Oxygen Content	≤18 New PPMA
Carborn Content	≤1New PPMA
Resistivity	≥0.001Ω·cm
Others	No Lineage,Slip,Twinning,Cracks,or Dislocations.
Length limits	Accoriding to your requirement.
MOQ	10kgs
Package	Packed in wooden crate,inside with Polyethylene foam.
Price	According to your specification,especially resistivity.