156mm P-type mono wafer

Specifications 156mm P-type mono wafer

1.Type:P type

2.Orientation:<100>

3.Dimention:200mm

4.Resistivity:0.5-6 ohm.cm

156mm P-type mono wafer

Item	Solar grade mono silicon wafer                   (125x125mm)	Solar grade mono silicon wafer                     (156x156mm)
Growth Method	CZ	CZ
Conductive Type	P	P
Dopant	Boron	Boron
Orientation	<100>±3°	<100>±3°
Resistivity	1 –3 ,3-6 Ω•cm	1 –3,3-6 Ω•cm
Bulk Lifetime	≥10μs	≥10μs
Oxygen Content	≤1.8*1018 /cm3	≤1.8*1018 /cm3
Carbon Content	≤5.0*1016 /cm3	≤5.0*1016 /cm3
Dimension	125*125±0.5mm	156*156±0.5mm
Diagonal	165±0.5mm	200±0.5mm
Square Sides Angle	90±0.3°	90±0.3°
Thickness	200±20um(thinnest≥180um)	200±20um(thinnest≥180um)
TTV	≤30um	≤30um
Saw Mark	≤15um	≤15um
Warp	≤40um	≤40um
Chips	Depth<0.3mm;Length<0.5mm	Depth<0.3mm;Length<0.5mm
	less than 2pcs per wafer	less than 2pcs per wafer
Appearance	No Stain, No Pinhole and Cracks by Visual Inspection	No Stain, No Pinhole and Cracks by Visual Inspection
Dislocation Density	≤1000 pcs/cm2	≤1000 pcs/cm2
MOQ	1000pcs	1000pcs
Package	Packed in Polyethylene foam box,400pcs/box	Packed in Polyethylene foam box,400pcs/box