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High thermal conductivity aluminum nitride ceramic rods
$8.00
≥1 Piece/Pieces
$4.00
≥100 Piece/Pieces
$3.50
≥1000 Piece/Pieces
Options:
- Customized according to drawings or samples
| Model No. : | AN-102 |
|---|---|
| Brand Name : | TecCeram |
| place of origin : | China |
Product description
Wuxi Tecceram Fine Ceramic Co., Ltd, founded in 2013, is focus on high technique and high precision engineering ceramic products. Material include alumina (99.8%, 99% and 95%), 3mol% yttria stabilized zirconia (3Y-TZP, white color), super high bending strength and toughness nano-meter zirconia (3Y-TZP, blue color), high thermal conductivity aluminum nitride (AlN, grey color) magnesium oxide full stabilized zirconia (Mg-PSZ, yellow) and silicon nitride (grey color or black color ). The raw material of these ceramics are imported from German, Janpan and France.
Aluminum nitride plate is a type of ceramic material that is composed of aluminum and nitrogen atoms. It has excellent thermal conductivity, high electrical insulation properties, and good mechanical strength. Aluminum nitride plates are commonly used in various applications, including power electronics, semiconductor manufacturing, and thermal management. They are often used as substrates for electronic components, heat sinks, and insulating layers in electronic devices. The plates can be manufactured in different sizes and thicknesses to meet specific requirements.
| Aluminum nitride ceramic performance table | |||
| Property | Item | Data | Unit |
| Mechanical Characteristics | Color | Grey | |
| Density | 3.3 | g/cm3 | |
| Bending Strength | 320 | MPa | |
| Compressive Strength | 2,100 | MPa | |
| Elastic Modulus | 300 | GPa | |
| Fracture Toughness | 3.3 | MPa m1/2 | |
| Vickers Hardness(HV0.5) | 11 | GPa | |
| Thermal Characterics | Coefficient of Line Thermal Expansion | 3.6 | 10-6 K-1 |
| Thermal Conductivity | 180 | W/mK | |
| Thermal Shock Resistance (Put in Water) | 400 | ∆T °C | |
| Max Working Temperature （in air） | 1,300 | °C | |
| Electrical Characteristics | Volume Resistance at 20°C | >1012 | Ωcm |
| Dielectric Strength | 14×106 | V/m | |
| Dielectric Constant | 1.7 | εr | |
| One MHZ Dielectric Loss Angle at 20°C | 3 | tanδ | |
| Chemical Characteristics | Nitric Acid (60%) 90°C | 1 | WT Loss mg/cm2/day |
| Sulphuric Acid (95%) 95°C | ≒0.00 | ||
| Caustic Soda (30%) 80°C | 0.2 | ||
High purity aluminum nitride substrate refers to a substrate made of aluminum nitride (AlN) that has a high level of purity. Aluminum nitride is a ceramic material that exhibits excellent thermal conductivity, high electrical resistivity, and low dielectric loss. It is commonly used in electronic and optoelectronic applications, such as high-power electronic devices, LED lighting, and thermal management systems.
The purity of the aluminum nitride substrate is crucial for its performance and reliability in these applications. High purity ensures that the substrate has minimal impurities, such as oxygen, carbon, and other metallic elements, which can affect its thermal and electrical properties. A high-purity aluminum nitride substrate also provides better thermal management, as impurities can hinder heat dissipation.
High-purity aluminum nitride substrates are available in various sizes and thicknesses to meet the specific requirements of different applications. They are often used as a base material for the growth of epitaxial layers or thin films, which further enhance the device performance.
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