16A BTB16-800BW 800V Triac use on inductive load
16A BTB16-800BW 800V Triac use on inductive load
16A BTB16-800BW 800V Triac use on inductive load
16A BTB16-800BW 800V Triac use on inductive load
16A BTB16-800BW 800V Triac use on inductive load
16A BTB16-800BW 800V Triac use on inductive load
16A BTB16-800BW 800V Triac use on inductive load

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16A BTB16-800BW 800V Triac use on inductive load

  • $0.16

    ≥5000 Piece/Pieces

  • $0.14

    ≥10000 Piece/Pieces

Options:

  • IT(RMS):16A
  • VDRM:800V
  • VRRM:800V
  • VTM:≤ 1.5v
  • Tstg:-40~150℃
  • Tj:-40~150℃
  • ITSM:160A
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Model No. : YZPST-BTB16-800BW
Brand Name : YZPST
place of origin : China
IT(RMS) : 16A
VDRM : 800V
VRRM : 800V
VTM : ≤ 1.5v
Tstg : -40~150℃
Tj : -40~150℃
ITSM : 160A
I2t : 128A2s
dI/dt : 50A/μs
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6yrs

Yangzhou, Jiangsu, China

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Product description

YZPST-BTB16-800BW 800V BTB16-800BW 16A Triac

BTA16/BTB16  (BT139) Series16ATriacs

DESCRIPTION:


With high ability to withstand the shock loading of Large current, BTA16/BTB16 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface.

With high commutation performances, 3 quadrantsproducts especially recommended for use on inductive load. From all three terminals to external heatsink, BTA16 provides a rated insulation voltage of 2500 VRMS complying with UL standards

YZPST-BTB16-600B-1


MAIN FEATURES:

symbol

value

unit

IT(RMS)

16

A

VDRM/VRRM

600/800/ 1200

V

VTM

≤ 1.5

V

ABSOLUTE MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

Operating junction temperature range

Tj

-40~125

Repetitive peak off-state voltage (Tj=25C)

VDRM

600/800/ 1200

V

Repetitive peak reverse voltage (Tj=25C)

VRRM

600/800/ 1200

V

RMS on-state current

IT(RMS)

16

A

Non repetitive surge peak on-state current (full cycleF=50Hz)

ITSM

160

 A

I2t value for fusing (tp=10ms)

I2t

128

A2s

Critical rate of rise of on-state current(IG=2× IGT)

dI/dt

50

A/μs

Peak gate current

IGM

4

A

Average gate power dissipation

PG(AV)

1

W

Peak gate power

PGM

5

W

ELECTRICAL CHARACTERISTICS (Tj=25C unless otherwise specified)

3 Quadrants

Parameter Value
Test Condition Quadrant TW SW CW BW Unit
IGT VD=12V, 5 10 35 50 A
VGT RL=33Ω - MAX 1.3 V
VGD VD=VDRM - MIN 0 2 V
IH IT=100mA MAX 15 25 40 60 A
- 20 30 50 70 m
IL IG=1.2IGT MAX 25 40 60 90 A
VD=2/3VDRM   Tj=125Gate open
dV/dt MIN 100 200 500 1000 Vs

4 Quadrants

Parameter Value
Test Condition Quadrant C B Unit
- 25 50 A
IGT VD=12V, 50 70 A
VGT RL=33Ω ALL MAX 1.5 V
VGD VD=VDRM ALL MIN 0.2 V
IH IT=100mA MAX 40 60 A
- 50 70 m
IL IG=1.2IGT MAX 70 90 A
VD=2/3VDRM   Tj=125Gate open
dV/dt MIN 200 500 Vs

STATIC CHARACTERISTICS

Symbol Test Condition Value Unit
VTM ITM=22.5A   tp=380μs Tj=25C MAX 1.5 V
IDRM Tj=25C 5 A
IRRM VDRMVRRM Tj=125C MAX 1 A

THERMAL RESISTANCES


Symbol Test Condition Value Unit
Rth(j-c) TO-220A(Ins) 2.1 /W
TO-220B(Non-Ins) 1.3
TO-220F(Ins) 2.3
junction to case(AC) TO-263 2.4

ORDERING INFORMATION
YZPST-BTB16-600B-2
PACKAGE MECHANICAL DATA
YZPST-BTB16-600B


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