Silicon PNP Darlington Power Transistor
Silicon PNP Darlington Power Transistor
Silicon PNP Darlington Power Transistor
Silicon PNP Darlington Power Transistor
Silicon PNP Darlington Power Transistor
Silicon PNP Darlington Power Transistor
Silicon PNP Darlington Power Transistor

Video

1 / 5

Silicon PNP Darlington Power Transistor

  • $0.72

    ≥100 Piece/Pieces

  • $0.55

    ≥500 Piece/Pieces

Send Inquiry
Model No. : YZPST-FW26025A
Brand Name : YZPST
Type : Intrinsic Semiconductor
Application : Radio
Batch Number : 2010+
VCBO : -100V
VCEO : -100V
VEBO : -5V
IC : -20A
Icm : -40A
IB : -0.5A
PC : 160W
TJ : 200℃
Tstg : -65~200℃
More
6yrs

Yangzhou, Jiangsu, China

Visit The Store
  • Gold Supplier
  • Platform Certification
  • Online Expo
  • Video

Product description

Silicon PNP Darlington Power Transistor

YZPST-FW26025A

Silicon PNP Darlington Power Transistor

DESCRIPTION

·High DC Current Gain-

: hFE = 5000(Min)@ IC= -2A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -100V(Min)

·Minimum Lot-to-Lot variations for robust device performance and reliable operation.

APPLICATIONS

·Designed for linear and switching industrial equipment

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

 

PARAMETER

 

VALUE

 

UNIT

 

VCBO

 

Collector-Base Voltage

 

-100

 

V

 

VCEO

 

Collector-Emitter Voltage

 

-100

 

V

 

VEBO

 

Emitter-Base Voltage

 

-5

 

V

 

IC

 

Collector Current-Continuous

 

-20

 

A

 

ICM

 

Collector Current-Peak

 

-40

 

A

 

IB

 

Base Current- Continuous

 

-0.5

 

A

 

PC

Collector Power Dissipation

@TC=25

 

160

 

W

 

Tj

 

Junction Temperature

 

200

 

Tstg

 

Storage Temperature Range

 

-65~200

THERMAL CHARACTERISTICS

SYMBOL

 

PARAMETER

 

MAX

 

UNIT

 

Rth j-c

 

Thermal Resistance, Junction to Case

 

1.09

/W

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

 

SYMBOL

 

PARAMETER

 

CONDITIONS

 

MIN

 

TYP.

 

MAX

 

UNIT

 

VCEO(SUS)*

 

Collector-Emitter Sustaining Voltage

 

IC= -100mA, IB= 0

 

-100

 

 

 

V

 

VCE(sat)-1*

 

Collector-Emitter Saturation Voltage

 

IC= -10A ,IB= -40mA

 

 

 

-2.0

 

V

 

VCE(sat)-2*

 

Collector-Emitter Saturation Voltage

 

IC= -20A ,IB= -200mA

 

 

 

-3.0

 

V

 

VBE(sat)*

 

Base-Emitter Saturation Voltage

 

IC= -20A ,IB= -200mA

 

 

 

-4

 

V

 

V BE(on)*

 

Base-Emitter On Voltage

 

IC= -10A ; VCE= -3V

 

 

 

-2.8

 

V

 

ICEO

 

Collector Cutoff current

 

VCE= -50V, IB= 0

 

 

 

-1

 

mA

 

ICEV

 

Collector Cutoff current(VBE=-1.5V)

VCE= -100V, IB= 0

 

 

-0.5

 

mA

VCE= -100V, IB= 0,Tc=150

-5

 

IEBO

 

Emitter Cutoff Current

 

VEB= -5V; IC= 0

 

 

 

-2

 

mA

 

hFE-1*

 

DC Current Gain

 

IC= -2A ; VCE= -3V

 

5000

 

 

 

 

hFE-2*

 

DC Current Gain

 

IC= -10A ; VCE= -3V

 

750

 

 

18000

 

 

hFE-3*

 

DC Current Gain

 

IC= -30A ; VCE= -3V

 

200

 

 


*:Pulse test:Pulse width=300us,duty cycle≤2%

Silicon PNP Darlington Power Transistor




Video

Send Inquiry

Product Alert

Subscribe to your interested keywords. We will send freely the latest and hottest products to your Inbox. Don't miss any trade information.

版权所有 © 宁波全贸信息技术有限公司 浙ICP备12012821号-1 浙B2-20200628