Silicon Ingot Used In Various Discrete Devices

Name: Silicon Ingot Used In Various Discrete Devices
Brand: Shanghai Panmeng Electronic Materials Co., Ltd.
Rating: 4.7 (19 reviews)

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Model No. :	Silicon Ingot Used In Various Discrete Devices
Brand Name :	Silicon Ingot Used In Various Discrete Devices

9yrs

Shanghai, Shanghai, China

Shanghai Panmeng Electronic Materials Co., Ltd.

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Product description

Silicon Ingot Used In Various Discrete Devices
Size	3"/4"/5"/6"/8''
Growth method	CZ
Diameter	76.2±0.3mm /100±0.4mm / 125±0.5mm / 150±0.5mm / 200±0.5mm
Orientation	<111>/<100>
Type	N-type/P-type
Dopant	P-type:Boron
	N-type:Phos./As./Sb.
Purity	11N(99.999999999%)
Oxygen Content	≤18 New PPMA
Carborn Content	≤1New PPMA
Resistivity	≥0.001Ω·cm
Others	No Lineage,Slip,Twinning,Cracks,or Dislocations.
Length limits	Accoriding to your requirement.
MOQ	10kgs
Package	Packed in wooden crate,inside with Polyethylene foam.
Price	According to your specification,especially resistivity.