Ceramic PBN Pyrolytic Boron Nitride Plate,Rod And Crucible Etc.
Ceramic PBN Pyrolytic Boron Nitride Plate,Rod And Crucible Etc.
Ceramic PBN Pyrolytic Boron Nitride Plate,Rod And Crucible Etc.

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Ceramic PBN Pyrolytic Boron Nitride Plate,Rod And Crucible Etc.

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Brand Name : Fu Qiang

Product description

Specifications Ceramic PBN Pyrolytic Boron Nitride Parts

1.Purity up to 99.99%,dense surface,air tightness

2.High temperature strength

The Professional Manufacturer For PBN Since Year 1980,The No.1 Exporter:  Ceramic Pyrolytic Boron Nitride PBN Plate,Crucible,Rod,Parts,The High Technology production & steady quality! Accept Customized Designs & Dimensions!   Product Overview: Pyrolytic boron nitride (PBN) is a special ceramic material, obtained from special equipment by using chemical vapor deposition process. The pyrolytic boron nitride deposition process, like a "snow": hexagonal boron nitride snow sheet parallel to falls, to a piece of graphite base material, and reaches a certain thickness, the final cooling demolding made.   Main features: 1.Color ivory white to orange-brown, non-toxic, non-porous, easy to process.  2.Purity up to 99.99%, dense surface, air tightness.  3.High temperature strength with increasing temperature, 2200 °C reaches the maximum value.  4.Acid, alkali, salt and organic reagents, high temperature, and the vast majority of the molten metal, semiconductor material is not moist, not reaction.  5 Good thermal shock resistance, good thermal conductivity, low thermal expansion coefficient.  6 High resistance, high dielectric strength, a small dielectric constant, and low magnetic loss tangent, and having a good permeability of microwave and infrared properties.  7. Performance of the mechanical, thermal, electrical, and so there is a clear anisotropy.   The main parameters:

Performance

Unit

Index

Lattice constant

μ m

a:2.504×10-10     c:6.692×10-10

Apparent density

g/cm3

2.0-2.19

Microhardness (Knoop) (ab plane)

N/mm2

691.88

Volume resistivity

Ω·cm

3.11×1011

Tensile strength (|| “C”)

N/mm2

153.86

Bending strength

(|| “C”)

N/mm2

243.63

(⊥“C”)

N/mm2

197.76

Modulus of elasticity

 

N/mm2

235690

Thermal conductivity

 

W/m·k

“a”direction   “c”direction

(200°C)

W/m·k

60           2.60

(900°C)

W/m·k

43.70       2.80

Dielectric strength (room temperature)

KV/mm

56

  Applications: Heater, to prevent the generation of impurities in the semiconductor material manufacturing equipment, in order to improve the purity.   Overview:        
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