Product description
Aluminum nitride ceramic substrate, aluminum nitride substrate, AlN substrate, AIN wafer
Properties:
- Aluminum nitride substrate material has excellent ability to dissipate heat up to 200W/mK
- The answer to the present trend toward miniaturization of high-power microelectronic circuits and other high thermal hazard-free applications
- Good dielectric properties
- High thermal conductivity
- Aluminum nitride has a hexagonal crystal structure and is a covalent bonded material
- The use of sintering aids and hot pressing is required to produce a dense technical grade material
Aluminum nitride substrate material has excellent ability to dissipate heat up to 200W/mK
The answer to the present trend toward miniaturization of high-power microelectronic circuits and other high thermal hazard-free applications
Good dielectric properties
High thermal conductivity
Aluminum nitride has a hexagonal crystal structure and is a covalent bonded material
The use of sintering aids and hot pressing is required to produce a dense technical grade material