Aluminum nitride ceramic substrate
Aluminum nitride ceramic substrate
Aluminum nitride ceramic substrate
Aluminum nitride ceramic substrate
Aluminum nitride ceramic substrate

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Aluminum nitride ceramic substrate

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Model No. : XTL-AS04
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Product description

  • Aluminum nitride ceramic substrate, aluminum nitride substrate, AlN substrate, AIN wafer
  • Properties:
    • Aluminum nitride substrate material has excellent ability to dissipate heat up to 200W/mK
    • The answer to the present trend toward miniaturization of high-power microelectronic circuits and other high thermal hazard-free applications
    • Good dielectric properties
    • High thermal conductivity
    • Aluminum nitride has a hexagonal crystal structure and is a covalent bonded material
    • The use of sintering aids and hot pressing is required to produce a dense technical grade material
  • Aluminum nitride substrate material has excellent ability to dissipate heat up to 200W/mK
  • The answer to the present trend toward miniaturization of high-power microelectronic circuits and other high thermal hazard-free applications
  • Good dielectric properties
  • High thermal conductivity
  • Aluminum nitride has a hexagonal crystal structure and is a covalent bonded material
  • The use of sintering aids and hot pressing is required to produce a dense technical grade material
  • Send Inquiry

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